Yb:YAG is one of the most promising laser-active materials and more suitable for diode-pumping than the traditional Nd-doped systems. Compared with the commonly used Nd:YAG crystal, Yb:YAG crystal has a much larger absorption bandwidth to reduce thermal management requirements for diode lasers, a longer upper-laser level lifetime, three to four times lower thermal loading per unit pump power. Yb:YAG crystal at 1030nm is a good substitute for a Nd:YAG crystal at 1064nm and its second harmonic at 515nm may replace Ar-ion laser (with a large volume), which emit at 514nm.
• Very low fractional heating, less than 11%
• Very high slope efficiency
• Broad absorption bands, about 8nm@940nm
• No excited-state absorption or up-conversion
• Conveniently pumped by reliable InGaAs diodes at 940nm(or 970nm)
• High thermal conductivity and large mechanical strength
• High optical quality
Angle tolerance:
|
Δθ< ± 0.5°; Δφ< ±0.5°
|
Dimensional Tolerance:
|
(W ± 0.1mm) x (H ± 0.1mm) x (L + 0.2mm/-0.1mm)
|
Flatness:
|
<λ/8 at 633nm
|
Surface Quality:
|
10/5 S/D
|
Parallelism:
|
< 20 arc seconds
|
Perpendicularity:
|
< 5 arc minutes
|
Wavefront Distortion:
|
<λ/8 at 632.8nm
|
Clear Aperture:
|
Central 95%
|
Chamfer:
|
0.15x45°
|
Coating:
|
Customized
|